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trenchfet power mosfets 175 c junction temperature new low thermal resistance package

automotive ? 42-v eps and abs ? dc/dc conversion ? motor drives isolated dc/dc converters ? primary-side switch ? high voltage synchronous rectifier sum65N20-30 vishay siliconix new product document number: 71702 s-04920?rev. a, 15-oct-01 www.vishay.com 1 n-channel 200-v (d-s) 175 c mosfet v (br)dss (v) r ds(on) ( ) i d (a) 200 0.030 @ v gs = 10 v 65 a d g s n-channel mosfet to-263 s d g top view sum65N20-30

parameter symbol limit unit drain-source voltage v ds 200 gate-source voltage v gs 20 v t c = 25 c 65 a continuous drain current (t j = 175 c) t c = 125 c i d 37 a pulsed drain current i dm 140 a avalanche current i ar 35 repetitive avalanche energy b l = 0.1 mh e ar 61 mj t c = 25 c 375 c maximum power dissipation b t a = 25 c d p d 3.75 w operating junction and storage temperature range t j , t stg ?55 to 175 c

parameter symbol limit unit junction-to-ambient pcb mount (to-263) d r thja 40 junction-to-case (drain) r thjc 0.4 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material). free datasheet http://
sum65N20-30 vishay siliconix new product www.vishay.com 2 document number: 71702 s-04920 ? rev. a, 15-oct-01

parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 200 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 160 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 160 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 160 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 30 a 0.023 0.030 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.063 ds(on) v gs = 10 v, i d = 30 a, t j = 175 c 0.084 forward transconductance a g fs v ds = 15 v, i d = 30 a 25 s dynamic b input capacitance c iss 5100 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 480 pf reverse transfer capacitance c rss 210 total gate charge c q g 90 130 gate-source charge c q gs v ds = 100 v, v gs = 10 v, i d = 85 a 23 nc gate-drain charge c q gd ds gs d 34 turn-on delay time c t d(on) 24 35 rise time c t r v dd = 100 v, r l = 1.5 220 330 turn-off delay time c t d(off) v dd = 100 v, r l = 1.5 i d 65 a, v gen = 10 v, r g = 2.5 45 70 ns fall time c t f 200 300 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 65 pulsed current i sm 140 a forward voltage a v sd i f = 65 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 130 200 ns peak reverse recovery current i rm(rec) i f = 50 a, di/dt = 100 a/ s 8 12 a reverse recovery charge q rr f 0.52 1.2 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. free datasheet http://
sum65N20-30 vishay siliconix new product document number: 71702 s-04920 ? rev. a, 15-oct-01 www.vishay.com 3

0 1000 2000 3000 4000 5000 6000 7000 0 25 50 75 100 125 150 0 4 8 12 16 20 0 25 50 75 100 125 150 0 30 60 90 120 150 180 0 20 40 60 80 100 120 0.000 0.015 0.030 0.045 0.060 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 01234567 0 20 40 60 80 100 120 140 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c t c = 125 c v ds = 100 v i d = 65 a v gs = 10 thru 7 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 4 v ? on-resistance ( r ds(on) ) ? drain current (a) i d i d ? drain current (a) 6 v c rss 5 v free datasheet http://
sum65N20-30 vishay siliconix new product www.vishay.com 4 document number: 71702 s-04920 ? rev. a, 15-oct-01

drain source breakdown vs. junction t emperature avalanche current vs. time 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) ) 0 180 190 200 210 220 230 240 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c (v) v (br)dss i d = 1.0 ma 100 1 0.0001 i av (a) @ t a = 25 c free datasheet http://
sum65N20-30 vishay siliconix new product document number: 71702 s-04920 ? rev. a, 15-oct-01 www.vishay.com 5
0 15 30 45 60 75 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 1000 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c ? ambient temperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s single pulse 0.05 0.02 1 100 free datasheet http://

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